STS3C3F30L データシート - STMicroelectronics
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STS3C3F30L
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STMicroelectronics
DESCRIPTION
This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
■ TYPICAL RDS(on) (N-Channel) = 50 mΩ
■ TYPICAL RDS(on) (P-Channel) = 140 mΩ
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
APPLICATIONS
■ DC/DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
■ POWER MANAGEMENT IN CELLULAR PHONES
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