STS3C3F30L データシートの表示（PDF） - STMicroelectronics
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STS3C3F30L
STMicroelectronics
STS3C3F30L Datasheet PDF : 10 Pages
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STS3C3F30L
THERMAL DATA
Rthj-amb(1) Thermal Resistance Junction-ambient
Single Operation
62.5
Dual Operating
78
Tl
Maximum Lead Temperature For Soldering Purpose
300
(1) when mounted on 0.5 in2 pad of 2 oz. copper
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
30
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
Typ.
Max. Unit
V
1
µA
10 µA
±100 nA
ON
Symbol
VGS(th)
Parameter
Gate Threshold Voltage
RDS(on)
Static Drain-source On
Resistance
Test Conditions
Min.
VDS = VGS
ID = 250 µA n-ch 1
p-ch 1
VGS = 10 V
VGS = 10 V
VGS = 4.5 V
VGS = 4.5 V
ID = 1.75 A
ID = 1.5 A
ID = 1.75 A
ID = 1.5 A
n-ch
p-ch
n-ch
p-ch
Typ.
50
140
60
160
Max. Unit
V
V
65 mΩ
165 mΩ
90 mΩ
200 mΩ
DYNAMIC
Symbol
gfs (*)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
Min.
VDS = 15 V
VDS = 15 V
ID= 1.75 A n-ch
ID= 1.5 A p-ch
n-ch
p-ch
VDS = 25V, f = 1 MHz, VGS = 0 n-ch
p-ch
n-ch
p-ch
Typ.
5.5
4
320
420
90
95
40
30
Max. Unit
S
S
pF
pF
pF
pF
pF
pF
2/10
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