STS3C3F30L データシートの表示（PDF） - STMicroelectronics
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STS3C3F30L
STMicroelectronics
STS3C3F30L Datasheet PDF : 10 Pages
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STS3C3F30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
N-CHANNEL
VDD = 15 V
ID = 1.75 A
RG = 4.7 Ω VGS = 4.5 V
P-CHANNEL
VDD = 15 V
ID = 1.5 A
RG = 4.7 Ω VGS = 4.5 V
(Resistive Load, Figure 1)
n-ch
p-ch
n-ch
p-ch
N-CHANNEL
VDD=24V ID=3.5A
VGS=4.5V
n-ch
p-ch
P-CHANNEL
n-ch
VDD = 24V ID = 3A VGS = 4.5V p-ch
(see test circuit, Figure 2)
n-ch
p-ch
Min.
Typ.
27
14.5
40
37
8.5
4.8
2
1.7
4
2
Max. Unit
ns
ns
ns
ns
12 nC
7 nC
nC
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
Turn-off Delay Time
tf
Fall Time
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
N-CHANNEL
VDD = 15 V
ID = 1.75 A
RG = 4.7 Ω VGS = 4.5 V
P-CHANNEL
VDD = 15 V
ID = 1.5 A
RG = 4.7 Ω VGS = 4.5 V
(Resistive Load, Figure 1)
Min.
n-ch
p-ch
n-ch
p-ch
Test Conditions
Min.
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
n-ch
p-ch
n-ch
p-ch
VSD(∗) Forward On Voltage
ISD = 3.5 A
ISD = 3 A
VGS = 0
VGS = 0
n-ch
p-ch
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
N-CHANNEL
ISD = 3.5 A di/dt = 100A/µs
VDD = 15 V Tj =150 oC
P-CHANNEL
ISD = 3 A di/dt = 100A/µs
VDD = 15 V Tj =150 oC
(see test circuit, Figure 3)
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•) Pulse width limited by safe operating area.
Typ.
30
90
20
23
Typ.
28
35
18
25
1.3
1.5
Max. Unit
ns
ns
ns
ns
Max. Unit
3.5 A
3
A
14
A
12
A
1.2 V
1.2 V
ns
ns
nC
nC
A
A
3/10
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