RJP60V0DPM-80 データシート - Renesas Electronics
部品番号
RJP60V0DPM-80
Other PDF
PDF
page
8 Pages
File Size
109.9 kB
メーカー
Renesas Electronics
Features
• High breakdown-voltage
• Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
• Short circuit withstand time (6 μs typ.)
• Trench gate and thin wafer technology (G6H series)
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