RJP60V0DPM-80 データシートの表示（PDF） - Renesas Electronics

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RJP60V0DPM-80

600V - 22A - IGBT Application: Inverter

Renesas Electronics 

RJP60V0DPM-80

600V - 22A - IGBT

Application: Inverter

Features

• High breakdown-voltage

• Low collector to emitter saturation voltage

VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

• Short circuit withstand time (6 μs typ.)

• Trench gate and thin wafer technology (G6H series)

Outline

RENESAS Package code: PRSS0003ZD-A

(Package name: TO-3PF)

G

1

2

3

Preliminary Datasheet

R07DS1036EJ0200

Rev.2.00

Apr 02, 2014

C

1. Gate

2. Collector

3. Emitter

E

Absolute Maximum Ratings

Item

Collector to emitter voltage / diode reverse voltage

Gate to emitter voltage

Collector current

Tc = 25°C

Tc = 100°C

Collector peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Value at Tc = 25°C

Symbol

VCES / VR

VGES

IC

IC

IC(peak) Note1

PC Note2

θj-c Note2

Tj

Tstg

Ratings

600

±30

45

22

90

60

2.08

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

°C/ W

°C

°C

R07DS1036EJ0200 Rev.2.00

Apr 02, 2014

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