RJP60V0DPM-80 データシートの表示（PDF） - Renesas Electronics
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RJP60V0DPM-80 Datasheet PDF : 8 Pages
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RJP60V0DPM-80
Typical Transfer Characteristics
100
Tc = –25°C
80
25°C
75°C
125°C
60
40
20
VCE = 10 V
Pulse Test
0
4 6 8 10 12 14 16
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
VCE = 10 V
Pulse Test
8
IC = 10 mA
6
4
1 mA
2
0
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
Dynamic Input Characteristics (Typical)
800
VCC = 400 V
600
300 V
16
VGE
12
400
200
0
0
8
VCC = 400 V
300 V
4
VCE
IC = 22 A
Ta = 25°C
0
20 40 60 80 100
Gate Charge Qg (nc)
Preliminary
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
4
VGE = 15 V
Pulse Test
3
IC = 45 A
2
22 A
3A
1
0
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
10000
Typical Capacitance vs.
Collector to Emitter Voltage
1000
Cies
100
Coes
10
VGE = 0 V
f = 1 MHz
Cres
1 Ta = 25°C
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
R07DS1036EJ0200 Rev.2.00
Apr 02, 2014
Page 4 of 7
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