Features
• Short circuit withstand time (5 μs typ.)
• Low collector to emitter saturation voltage
   VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode (100 ns typ.) in one package
• Trench gate and thin wafer technology
• High speed switching
   tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 Ω, inductive load)