Features
• Short circuit withstand time (5 s typ.)
• Low collector to emitter saturation voltage
      VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode (100 ns typ.) in one package
• Trench gate and thin wafer technology
• High speed switching
      tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 22 A, Rg = 5, Ta = 25°C, inductive load)