DESCRIPTION
• Built-in Base-Emitter Shunt Resistors
• High DC current gain
    hFE = 1000 (Min) @ IC = -5A
• Collector-Emitter Breakdown Voltage
    V(BR)CEO= -80V(Min)
• Complement to type MJ3001
   
APPLICATIONS
• Designed for use as output devices in complementary
    general purpose amplifier applications.