2SB1113 データシート - Inchange Semiconductor
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2SB1113
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Inchange Semiconductor
DESCRIPTION
• High DC Current Gain-
: hFE= 1000(Min.)@IC= -4A
• Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@IC= -4A
• Good Linearity of hFE
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• High power switching applications.
• Hammer drive, pulse motor drive applications.
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