2N6052 データシート - Inchange Semiconductor
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2N6052
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Inchange Semiconductor
DESCRIPTION
• Built-in Base-Emitter Shunt Resistors
• High DC current gainhFE = 750 (Min) @ IC = -6A
• Collector-Emitter Sustaining VoltageVCEO(SUS)= -100V(Min)
• Complement to type 2N6059
APPLICATIONS
• Designed for general purpose amplifier and low frequency
switching applications.
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