DESCRIPTION
The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
Class A operation
Internally matched to 50(ohm) system
● High output power
    P1dB=32W (TYP.) @f=1.9 - 2.0GHz
● High power gain
    GLP=13.0dB (TYP.) @f=1.9 - 2.0GHz
● High power added efficiency
    P.A.E.=45% (TYP.) @f=1.9 - 2.0GHz
● Low distortion [item -51]
    IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L

APPLICATION
● item 01 : 1.9 - 2.0 GHz band power amplifier
● item 51 : 1.9 - 2.0 GHz band digital radio communication