DESCRIPTION
The MGFC40V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
Class A operation Internally matched to 50(ohm) system
● High output power P1dB=10W (TYP.) @f=5.9 – 6.4GHz
● High power gain GLP=10dB (TYP.) @f=5.9 – 6.4GHz
● High power added efficiency P.A.E.=30% (TYP.) @f=5.9 – 6.4GHz
● Low distortion [item -51] IM3=-49dBc (TYP.) @Po=29dBm S.C.L

APPLICATION
● item 01 : 5.9 – 6.4 GHz band power amplifier
● item 51 : 5.9 – 6.4 GHz band digital radio communication