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MGFC36V7785A データシート - MITSUBISHI ELECTRIC

MGFC36V7785A image

部品番号
MGFC36V7785A

コンポーネント説明

Other PDF
  2004  

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page
2 Pages

File Size
84.5 kB

メーカー
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
Class A operation
Internally matched to 50(ohm) system
● High output power
    P1dB=4W (TYP.) @f=7.7 – 8.5GHz
● High power gain
    GLP=8.0dB (TYP.) @f=7.7 – 8.5GHz
● High power added efficiency
    P.A.E.=29% (TYP.) @f=7.7 – 8.5GHz
● Low distortion [item -51]
    IM3=-45dBc (TYP.) @Po=25dBm S.C.L


APPLICATION
● item 01 : 7.7 – 8.5 GHz band power amplifier
● item 51 : 7.7 – 8.5 GHz band digital radio communication

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部品番号
コンポーネント説明
PDF
メーカー
C band internally matched power GaAs FET
Mitsumi
C band internally matched power GaAs FET ( Rev : 2011 )
Mitsumi
C band internally matched power GaAs FET
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC

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