Description
The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing M/A-COMs HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies.
Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metalization allows for manual or automatic chip bonding via 80Au/20Sn, Sn62/Pb36/Ag2 solders or electrically conductive silver epoxy.

FEATUREs
• Broad Bandwith Specified up to 18 GHz
• Usable up to 26 GHz
• Integrated Bias Network
• Low Insertion Loss / High Isolation
• Rugged, Fully Monolithic, Glass Encapsulated Construction