Description
The MA4SW424B-1 device is a SP4T Switch with Integrated Bias Network utilizing M/A-COMs HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and/or shunt diodes or vias by imbedding them in a low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices exceptional low loss and high isolation performance with exceptional repeatability through lower millimeter frequencies.

FEATUREs
■ Frequency of Operation: 24 +/- 2 GHz
■ Fully Integrated Bias Network
■ Series Diode, Low Current Consumption Design : +12mA for Insertion Loss, 0 Volts for Isolation
■ The Device is Wire Bond Compensated at all RF Ports for RF Matching
■ Rugged, Fully Monolithic, Glass Encapsulated Construction