Description
The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing M/A-COMs HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through Ku Band frequencies.

FEATUREs
■ Broad Bandwith Specified from 2 to 18 GHz
■ Integrated D.C. Bias Network
■ Exceptional Isolation to Loss Ratio
■ Rugged, Fully Monolithic, Glass Encapsulated Construction

APPLICATIONs
    These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 80 nS Switching Speeds are Achieved.