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BS616UV1610FI データシート - Brilliance Semiconductor

BS616UV1610 image

部品番号
BS616UV1610FI

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10 Pages

File Size
210 kB

メーカー
BSI
Brilliance Semiconductor BSI

DESCRIPTION
The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage.


FEATURES
• Ultra low operation voltage : 1.8 ~ 2.3V
• Ultra low power consumption :
    Vcc = 2.0V C-grade: 25mA (Max.) operating current
                       I-grade : 30mA (Max.) operating current
                       1.2uA (Typ.) CMOS standby current
• High speed access time :
    -70 70ns (Max.) at Vcc=2V
    -10 100ns (Max.) at Vcc=2V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2,CE1 and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin

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部品番号
コンポーネント説明
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メーカー
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