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BS616UV1620 データシート - Brilliance Semiconductor

BS616UV1620 image

部品番号
BS616UV1620

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12 Pages

File Size
207.9 kB

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BSI
Brilliance Semiconductor BSI

DESCRIPTION
The BS616UV1620 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide range of 1.8V to 2.3V supply voltage.


FEATURES
• Ultra low operation voltage : 1.8 ~ 2.3V
• Ultra low power consumption :
    Vcc = 1.8V C-grade : 25mA (Max.) operating current
                       I- grade : 30mA (Max.) operating current
                      1.2uA (Typ.) CMOS standby current
• High speed access time :
    -70 70ns (Max.) at Vcc = 2.0V
    -10 100ns (Max.) at Vcc = 2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

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部品番号
コンポーネント説明
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メーカー
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
Unspecified
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Brilliance Semiconductor
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Brilliance Semiconductor

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