DESCRIPTION
The BS616UV2019 is a high performance, ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage.

FEATURES
• Wide Vcc operation voltage :
    C-grade: 1.8V~3.6V
    I-grade: 1.9V~3.6V (Vcc_min.=1.65V at 25°C)
• Ultra low power consumption :
    Vcc = 2.0V C-grade: 8mA (Max.) operating current
                       I -grade: 10mA (Max.) operating current
                       0.20uA (Typ.) CMOS standby current
    Vcc = 3.0V C-grade: 11mA (Max.) operating current
                       I -grade: 13mA (Max.) operating current
                       0.30uA (Typ.) CMOS standby current
• High speed access time :
    -85 85ns (Max.)
    -10 100ns (Max.)
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation