A1129M データシート - NEC => Renesas Technology
部品番号
A1129M
コンポーネント説明
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NEC => Renesas Technology
The 2SA1129 is a mold power transistor developed for mid-speed switching, and is ideal for use as a ramp driver.
FEATURES
• Large current capacity with small package: IC(DC)= −7.0 A
• Low collector saturation voltage:
VCE(sat) = −0.3 V MAX. @IC= −3.0 A, IB = −0.1 A
• Complementary transistor: 2SC2654
部品番号
コンポーネント説明
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メーカー
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING
NEC => Renesas Technology
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