2SD1588 データシート - NEC => Renesas Technology
部品番号
2SD1588
コンポーネント説明
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4 Pages
File Size
94.1 kB
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NEC => Renesas Technology
FEATURES
• Mold package that does not require an insulating board or insulation bushing
• Large current capacity in small dimension: IC(DC) = 7 A
• Low collector saturation voltage: VCE(sat) = 0.5 V MAX. (@5 A)
• Ideal for use in ramp drivers or inductance drivers
• Complementary transistor: 2SB1097
部品番号
コンポーネント説明
PDF
メーカー
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
NEC => Renesas Technology
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