2SD1691 データシート - Renesas Electronics
部品番号
2SD1691
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Renesas Electronics
FEATURES
• Large current capacity and low VCE(sat):
IC(DC) = 5.0 A, IC(pulse) = 8.0 A
VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A)
• Large power dissipation TO-126 type power transistor
PT = 1.3 W (@Ta = 25°C), 20 W (@Tc = 25°C)
• Complementary transistor: 2SB1151
部品番号
コンポーネント説明
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NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING
NEC => Renesas Technology
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
NEC => Renesas Technology
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