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CY7C4282V(2003) データシートの表示(PDF) - Cypress Semiconductor

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CY7C4282V Datasheet PDF : 15 Pages
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Depth Expansion Configuration
The CY7C4282V/92V can easily be adapted to applications
requiring more than 64K/128K words of buffering. Figure 3
shows Depth Expansion using three CY7C4282V/92Vs.
Maximum depth is limited only by signal loading. Follow these
steps:
1. The first device must be designated by grounding the First
Load (FL) control input.
2. All other devices must have FL in the HIGH state.
3. The Expansion Out (XO) pin of each device must be tied to
the Expansion In (XI) pin of the next device.
4. EF and FF composite flags are created by ORing together
each individual respective flag.
XO
WCLK RCLK
WEN
REN
RS
OE
7C4282V
D 7C4292V Q
VCC
FL
FF
EF
XI
CY7C4282V
CY7C4292V
DATAIN (D)
XO
WCLK
RCLK
WEN
REN
RS
OE
7C4282V
D 7C4292V Q
VCC
FL
FF
EF
XI
DATA OUT (Q)
WRITECLOCK (WCLK)
WRITEENABLE (WEN)
RESET (RS)
XO
WCLK RCLK
WEN
REN
RS 7C4282V OE
D 7C4292V Q
READ CLOCK (RCLK)
READ ENABLE (REN)
OUTPUTENABLE (OE)
FF
FF
EF
EF
FL XI
FIRST LOAD (FL)
Figure 3. Block Diagram of 64Kx9/128Kx9 Low-Voltage Deep Sync FIFO Memory
with Programmable Flags used in Depth Expansion Configuration
Document #: 38-06014 Rev. *B
Page 6 of 15

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