IKW25N120H3 データシートの表示（PDF） - Infineon Technologies

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IKW25N120H3

1200V high speed switching series third generation

Infineon Technologies 

IKW25N120H3

Highspeedswitchingseriesthirdgeneration

1000

td(off)

tf

td(on)

tr

1000

td(off)

tf

td(on)

tr

100

100

10

5

15

25

35

45

IC,COLLECTORCURRENT[A]

Figure 9. Typicalswitchingtimesasafunctionof

collectorcurrent

(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,

rG=23Ω,testcircuitinFig.E)

1000

td(off)

tf

td(on)

tr

10

5

15

25

35

45

55

65

rG,GATERESISTOR[Ω]

Figure 10. Typicalswitchingtimesasafunctionofgate

resistor

(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,

IC=25A,testcircuitinFig.E)

7

typ.

min.

max.

6

5

100

4

3

10

0 25 50 75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

2

0

25 50 75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

Figure 11. Typicalswitchingtimesasafunctionof

junctiontemperature

(ind.load,VCE=600V,VGE=15/0V,IC=25A,

rG=23Ω,testcircuitinFig.E)

Figure 12. Gate-emitterthresholdvoltageasafunction

ofjunctiontemperature

(IC=0.85mA)

9

Rev.2.1,2014-12-01

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