IKW25N120H3 データシートの表示（PDF） - Infineon Technologies

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IKW25N120H3

1200V high speed switching series third generation

Infineon Technologies 

IKW25N120H3

Highspeedswitchingseriesthirdgeneration

SwitchingCharacteristic,InductiveLoad

Parameter

Symbol Conditions

IGBTCharacteristic,atTvj=25°C

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Tvj=25°C,

VCC=600V,IC=25.0A,

VGE=0.0/15.0V,

RG(on)=23.0Ω,RG(off)=23.0Ω,

Lσ=80nH,Cσ=67pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

Value

Unit

min. typ. max.

-

27

- ns

-

41

- ns

- 277 - ns

-

17

- ns

- 1.80 - mJ

- 0.85 - mJ

- 2.65 - mJ

DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time

trr

Diode reverse recovery charge

Qrr

Diode peak reverse recovery current Irrm

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

Tvj=25°C,

VR=600V,

IF=25.0A,

diF/dt=500A/µs

- 290 - ns

- 1.20 - µC

- 10.4 - A

- -150 - A/µs

SwitchingCharacteristic,InductiveLoad

Parameter

Symbol Conditions

IGBTCharacteristic,atTvj=175°C

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Tvj=175°C,

VCC=600V,IC=25.0A,

VGE=0.0/15.0V,

RG(on)=23.0Ω,RG(off)=23.0Ω,

Lσ=80nH,Cσ=67pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

Value

Unit

min. typ. max.

-

26

- ns

-

35

- ns

- 347 - ns

-

50

- ns

- 2.60 - mJ

- 1.70 - mJ

- 4.30 - mJ

DiodeCharacteristic,atTvj=175°C

Diode reverse recovery time

trr

Diode reverse recovery charge

Qrr

Diode peak reverse recovery current Irrm

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

Tvj=175°C,

VR=600V,

IF=25.0A,

diF/dt=500A/µs

- 505 - ns

- 2.75 - µC

- 12.8 - A

- -85 - A/µs

6

Rev.2.1,2014-12-01

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