IKW25N120H3 データシートの表示（PDF） - Infineon Technologies

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IKW25N120H3

1200V high speed switching series third generation

Infineon Technologies 

IKW25N120H3

Highspeedswitchingseriesthirdgeneration

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Parameter

Symbol Conditions

StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES

Collector-emitter saturation voltage VCEsat

Diode forward voltage

VF

Diode forward voltage

VF

Gate-emitter threshold voltage

VGE(th)

Zero gate voltage collector current ICES

Gate-emitter leakage current

IGES

Transconductance

gfs

VGE=0V,IC=0.50mA

VGE=15.0V,IC=25.0A

Tvj=25°C

Tvj=125°C

Tvj=175°C

VGE=0V,IF=12.5A

Tvj=25°C

Tvj=175°C

VGE=0V,IF=25.0A

Tvj=25°C

Tvj=125°C

Tvj=175°C

IC=0.85mA,VCE=VGE

VCE=1200V,VGE=0V

Tvj=25°C

Tvj=175°C

VCE=0V,VGE=20V

VCE=20V,IC=25.0A

Value

Unit

min. typ. max.

1200 -

-V

-

-

2.05 2.40

2.50 -

V

- 2.70 -

- 1.80 2.35 V

- 1.85 -

-

-

2.40 3.05

2.60 -

V

- 2.60 -

5.0 5.8 6.5 V

-

- 250.0 µA

-

- 2500.0

-

- 600 nA

- 13.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Parameter

Symbol Conditions

DynamicCharacteristic

Input capacitance

Cies

Output capacitance

Coes

Reverse transfer capacitance

Cres

Gate charge

QG

Internal emitter inductance

measured 5mm (0.197 in.) from LE

case

Short circuit collector current

Max. 1000 short circuits

IC(SC)

Time between short circuits: ≥ 1.0s

VCE=25V,VGE=0V,f=1MHz

VCC=960V,IC=25.0A,

VGE=15V

VGE=15.0V,VCC≤600V,

tSC≤10µs

Tvj=175°C

Value

Unit

min. typ. max.

- 1430 -

- 115 - pF

-

75

-

- 115.0 - nC

- 13.0 - nH

-

87

-A

5

Rev.2.1,2014-12-01

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