IKW25N120H3 データシートの表示（PDF） - Infineon Technologies

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IKW25N120H3

1200V high speed switching series third generation

Infineon Technologies 

IKW25N120H3

Highspeedswitchingseriesthirdgeneration

MaximumRatings

Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

DCcollectorcurrent,limitedbyTvjmax

TC=25°C

IC

TC=100°C

Pulsedcollectorcurrent,tplimitedbyTvjmax

ICpuls

TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C

-

Diodeforwardcurrent,limitedbyTvjmax

TC=25°C

IF

TC=100°C

Diodepulsedcurrent,tplimitedbyTvjmax

IFpuls

Gate-emitter voltage

VGE

Short circuit withstand time

VGE=15.0V,VCC≤600V

Allowed number of short circuits < 1000

tSC

Time between short circuits: ≥ 1.0s

Tvj=175°C

PowerdissipationTC=25°C

PowerdissipationTC=100°C

Ptot

Operating junction temperature

Tvj

Storage temperature

Tstg

Soldering temperature,

wave soldering 1.6mm (0.063in.) from case for 10s

1200

V

50.0

A

25.0

100.0

A

100.0

A

25.0

A

12.5

100.0

A

±20

V

µs

10

326.0

156.0

W

-40...+175

°C

-55...+150

°C

260

°C

Mounting torque, M3 screw

Maximum of mounting processes: 3

M

0.6

Nm

ThermalResistance

Parameter

Characteristic

IGBT thermal resistance,

junction - case

Diode thermal resistance,

junction - case

Thermal resistance

junction - ambient

Symbol Conditions

Rth(j-c)

Rth(j-c)

Rth(j-a)

Max.Value

Unit

0.46

K/W

1.49

K/W

40

K/W

4

Rev.2.1,2014-12-01

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