M312L2828ET0 データシートの表示（PDF） - Samsung
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M312L2828ET0 Datasheet PDF : 23 Pages
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256MB, 512MB, 1GB Registered DIMM
DDR SDRAM
DDR SDRAM IDD spec table
M383(12)L3223ETS [ (32M x 8) * 9 , 256MB Module ]
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6 Normal
Low power
IDD7A
AA
(DDR266@CL=2)
1,560
1,790
360
810
490
600
1,030
1,890
1,840
2,070
360
340
3,270
A2
(DDR266@CL=2)
1,350
1,570
360
810
490
600
1,030
1,890
1,840
2,070
360
340
2,250
B0
(DDR266@CL=2.5)
1,350
1,570
360
810
490
600
1,030
1,890
1,840
2,070
360
340
2,250
(VDD=2.7V, T = 10°C)
A0
(DDR200@CL=2)
Unit
Notes
1,180
mA
1,360
mA
330
mA
670
mA
450
mA
530
mA
860
mA
1,580
mA
1,490
mA
1,810
mA
330
mA
320
mA Optional
2,480
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M383(12)L6423ETS [ (32M x 8) * 18 , 512MB Module ]
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6 Normal
Low power
IDD7A
AA
(DDR266@CL=2)
2,180
2,410
510
1,110
780
990
1,560
2,420
2,370
2,600
510
480
3,890
A2
(DDR266@CL=2)
1,880
2,100
510
1,110
780
990
1,560
2,420
2,370
2,600
510
480
3,410
B0
(DDR266@CL=2.5)
1,880
2,100
510
1,110
780
990
1,560
2,420
2,370
2,600
510
480
3,410
(VDD=2.7V, T = 10°C)
A0
(DDR200@CL=2)
Unit
Notes
1,660
mA
1,840
mA
480
mA
950
mA
720
mA
880
mA
1,350
mA
2,070
mA
1,980
mA
2,290
mA
480
mA
460
mA Optional
2,970
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Revision 1.4 February, 2004
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