M312L2828ET0 データシートの表示（PDF） - Samsung
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M312L2828ET0 Datasheet PDF : 23 Pages
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256MB, 512MB, 1GB Registered DIMM
DDR SDRAM
DDR SDRAM IDD spec table
M383(12)L6420ETS [ (64M x 4) * 18 , 512MB Module ]
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6 Normal
Low power
IDD7A
AA
(DDR266@CL=2)
2,370
2,730
380
990
650
870
1,440
2,790
3,060
3,510
379
352
5,430
A2
(DDR266@CL=2)
2,070
2,430
380
990
650
870
1,440
2,790
3,060
3,510
379
352
4,950
B0
(DDR266@CL=2.5)
2,070
2,430
380
990
650
870
1,440
2,790
3,060
3,510
379
352
4,950
(VDD=2.7V, T = 10°C)
A0
(DDR200@CL=2)
Unit
Notes
1,850
mA
2,120
mA
360
mA
830
mA
590
mA
750
mA
1,220
mA
2,300
mA
2,480
mA
3,110
mA
360
mA
330
mA Optional
4,280
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M383(12)L2828ET1(0) [ (st.128M x 4) * 18 , 1GB Module ]
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6 Normal
Low power
IDD7A
AA
(DDR266@CL=2)
3,490
3,850
558
1,470
1,100
1,530
2,370
3,720
3,990
4,440
558
504
6,550
A2
(DDR266@CL=2)
3,000
3,360
558
1,470
1,100
1,530
2,370
3,720
3,990
4,440
558
504
5,880
B0
(DDR266@CL=2.5)
3,000
3,360
558
1,470
1,100
1,530
2,370
3,720
3,990
4,440
558
504
5,880
(VDD=2.7V, T = 10°C)
A0
(DDR200@CL=2)
Unit
Notes
2,700
mA
2,970
mA
540
mA
1,280
mA
1,010
mA
1,330
mA
2,070
mA
3,150
mA
3,330
mA
3,960
mA
540
mA
480
mA Optional
5,130
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Revision 1.4 February, 2004
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