MT28S4M16LCTG-10 データシートの表示（PDF） - Micron Technology

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MT28S4M16LCTG-10

SYNCFLASH® MEMORY

Micron Technology 

4 MEG x 16

SYNCFLASH MEMORY

T0

T1

T2

T3

T4

T5

T6

CLK

COMMAND

READ

NOP

NOP

NOP

BURST

NOP

TERMINATE

NOP

X = 0 cycles

ADDRESS

BANK,

COL n

DQ

DOUT

n

CAS Latency = 1

DOUT

n+1

DOUT

n+2

DOUT

n+3

T0

T1

T2

T3

T4

T5

T6

CLK

COMMAND

READ

NOP

NOP

NOP

BURST

NOP

TERMINATE

NOP

ADDRESS

BANK,

COL n

X = 1 cycle

DQ

DOUT

n

DOUT

n+1

DOUT

n+2

DOUT

n+3

CAS Latency = 2

T0

T1

T2

T3

T4

T5

T6

T7

CLK

COMMAND

READ

NOP

NOP

NOP

BURST

NOP

TERMINATE

NOP

NOP

ADDRESS

BANK,

COL n

X = 2 cycles

DQ

DOUT

n

DOUT

n+1

DOUT

n+2

DOUT

n+3

CAS Latency = 3

NOTE: DQM is LOW.

Figure 10

Terminating a READ Burst

DON’T CARE

4 Meg x 16 SyncFlash

MT28S4M16LC_6.p65 – Rev. 6, Pub. 9/01

19

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc.

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