MS5F5617 データシートの表示（PDF） - Fuji Electric
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MS5F5617 Datasheet PDF : 13 Pages
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Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25℃ / chip
750
VGE=20V 15V
600
12V
10V
450
300
150
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
750
Tj=25℃ Tj=125℃
600
450
300
150
0
0
1
2
3
4
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
100.0
10.0
1.0
Cies
Cres
Coes
0.1
0
10
20
30
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125℃ / chip
750
VGE=20V 15V
600
12V
10V
450
300
150
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25ﾟC / chip
10
8
6
4
2
Ic=600A
Ic=300A
Ic=150A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=300V， Ic=300A，Tj= 25℃
VGE
VCE
0
500
1000
1500
Gate charge : Qg [ nC ]
MS5F 5617
a
9
13
H04-004-03a
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