SST38VF166-70-4C-EK データシートの表示（PDF） - Silicon Storage Technology

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SST38VF166-70-4C-EK

16 Megabit FlashBank Memory

Silicon Storage Technology 

Flash bank, BE#2 selects the second Flash bank, BE#3

selects the E2 bank. WE# is used with SDP to control the

Write or Erase and Program operation in each memory

bank.

The SST38VF166 provides the added functionality of

being able to simultaneously read from one memory bank

while writing, erasing, or programming to one other mem-

ory bank. Once the internally controlled Write, Erase, or

Program cycle in a memory bank has commenced, a differ-

ent memory bank can be accessed for read. Also, once

WE# and the applicable BE# are high during the SDP load

sequence, a different bank may be accessed to read. If

multiple bank enables are asserted simultaneously, the out-

puts will tri-state and no new memory operations can be

initiated. Only one bank may be written, erased, or pro-

grammed at any given time. The device ID and Common

Flash Interface (CFI) functions cannot be accessed while

any bank is writing, erasing, or programming.

The Auto Low Power Mode automatically puts the device

in a near standby mode after data has been accessed with

a valid Read operation. This reduces the IDD active read

current from typically 15mA to typically 3µA. The Auto Low

Power mode reduces the typical IDD active read current to

the range of 1mA/MHz of Read cycle time. The device exits

the Auto Low Power Mode with any address transition or

control signal transition used to initiate another Read cycle,

with no access time penalty.

Flash Bank Read

The Read operation of the SST38VF166 Flash Bank is

controlled by BE#1 or BE#2 and OE#, a bank enable and

output enable both have to be low for the system to obtain

data from the outputs. BE#1 is used for Flash bank 1

selection. When BE#1 is high, the Flash bank 1 is dese-

lected. BE#2 is used for Flash bank 2 selection. When

BE#2 is high, the Flash bank 2 is deselected. OE# is the

output control and is used to gate data from the output

pins. The data bus is in high impedance state when OE#

is high. Refer to the timing waveforms for further details

(Figure 2 or 3).

E2 Bank Read

The Read operation of the E2 bank is controlled by BE#3

and OE#, both have to be low for the system to obtain data

from the outputs. BE#3 is used for E2 bank selection. When

BE#3 is high, the E2 bank is deselected. OE# is the output

control and is used to gate data from the output pins. The

data bus is in high impedance state when OE# is high.

Refer to the timing waveforms for further details (Figure 4).

16 Megabit FlashBank Memory

SST38VF166

Data Sheet

Write Modes

The SST38VF166 device has separate Write modes for

the E2 bank and Flash banks. The conventional E2PROM

Word-Write with internally timed automatic Erase before

Program is the most convenient and easy method for the

user to alter data in the E2 bank with the Word-Write opera-

tion, the word being written is the only word that is altered.

Bank- or Sector-Erase plus Word-Program operations may

also be used for the E2 bank. For both banks of the Flash

array, the SST38VF166 offers Bank-, Block-, and Sector-

Erase plus Word-Program operations.

Write

All Write operations are initiated by first issuing the Soft-

ware Data Protect (SDP) entry sequence for Bank-, Block-,

or Sector-Erase then Word-Program in the selected Flash

bank; or for Word-Write or for Sector-Erase and Word-Pro-

gram in the E2 bank. Word-Write, Word-Program, and all

Erase commands have a fixed duration, that will not vary

over the life of the device, i.e., are independent of the num-

ber of Erase/Program cycles endured.

Either Flash bank may be read during the internally con-

trolled E2 bank Write cycle, e.g., the Flash bank may be

accessed to fetch instructions or data when the E2 bank is

being written, erased, or programmed. Additionally, the

alternate Flash bank may be read while erasing or pro-

gramming the other Flash or E2 bank. At any given time,

only one bank may be performing a Write operation, during

that time any other bank is available for read.

The Write Status command may be used to determine if

any bank is being written, at any given time. This may be

required if the system does not use a timer or does not

monitor toggle bit or data# polling when writing a specific

bank. In order to implement the Write Status command,

address 5XXXH in the E2 bank address space is reserved.

This address is outside the normal address space of the E2

bank; therefore, will not interfere with normal reading within

the E2 bank address space.

The device is always in the Software Data Protected mode

for all Write operations in both the Flash bank and E2 bank.

Write operations are controlled by toggling WE# or BE#.

The falling edge of WE# or BE#, whichever occurs last,

latches the address. The rising edge of WE# or BE#,

whichever occurs last, latches the data and initiates the

Erase, Program, or Write cycle.

The SDP Erase, Program, or Write commands are all BE#

specific. Whichever BE# is used for the first SDP bus cycle

(except for Read operation with WE# high), that BE# must

be used for all subsequent SDP bus cycles, for the com-

mand to be executed. If a different BE# is pulsed during a

©2001 Silicon Storage Technology, Inc.

2

327-3 2/01

S71065

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