General Description
This Power MOSFET is produced using Winsemi's trench Layout -based process .This technology mproves the performances Compared with standard parts form various sources.All of these power MOSFETs are designed for applications in switching regulators , switching convertors, motor and relay drivers ,and drivers for high power bipolar switching transistors demanding high speed and low gate drive power.

FEATUREs
■ RDS(on)(Max 22mΩ)@VGS=10V
■ Ultra-low Gate Charge(Typical 31nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)