GeneralDescription
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a lowgate charge with superior switching performance, and ruggedavalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and power Management inportable and battery operated products.

FEATUREs
■ 109A,60V,RDS(on)(Max8mΩ)@VGS=10V
■ Ultra-lowGatecharge(Typical50nC)
■ FastSwitchingCapability
■ 100%AvalancheTested
■ MaximumJunctionTemperatureRange(150℃)