DESCRIPTION
NECs μPG2301TQ is a GaAs HBT MMIC for power amplifier for Bluetooth Class 1.
This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in a low profile 10-pin plastic TSON package.

FEATURES
• OPERATION FREQUENCY
    fopt = 2,400 to 2,500 MHz (2 450 MHz TYP.)
• SUPPLY VOLTAGE
    VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.)
• CONTROL VOLTAGE
    Vcont = 0 to 3.6 V (2.5 V TYP.)
    Venable = 0 to 3.1 V (2.9 V TYP.)
• CIRCUIT CURRENT
    ICC = 120 mA TYP.@ VCC1, 2 = Vbias = 3.3 V, Vcont = 2.5 V,
    Venable = 2.9 V, Pin = +4 dBm
• MAXIMUM POWER
    Pout(MAX.) = +23 dBm TYP.@ VCC1, 2 = Vbias = 3.3 V,
    Vcont = 2.5 V, Venable = 2.9 V, Pin = +4 dBm
• GAIN CONTROL RANGE
    GCR = 23 dB TYP.@ VCC1, 2 = Vbias = 3.3 V,
    Vcont = 0 to 2.5 V, Venable = 2.9 V, Pin = +4 dBm
• POWER GAIN
    GP = 23 dB TYP.(Reference value)
• HIGH EFFICIENCY
    PAE = 50% TYP.(Reference value)
• SHUT DOWN FUNCTION
• HIGH-DENSITY SURFACE MOUNTING
    10 pin plastic TSON package (2.4 × 2.55 × 0.6 mm)

APPLICATION
• POWER AMPLIFIER FOR BLUETOOTH CLASS 1
• WIRELESS LAN