メーカー
![CEL](/logo/CEL.png)
California Eastern Laboratories.
![CEL](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
NECs NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NECs new low profile/flat lead style "M13" package is ideal for todays portable wireless applications.
FEATURES
• NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 14 GHz
• LOW NOISE FIGURE:
NF = 1.4 dB at 2 GHz
NEC's NPN SILICON TRANSISTOR
California Eastern Laboratories.
NEC's NPN SILICON TRANSISTOR
California Eastern Laboratories.
NEC's NPN SILICON TRANSISTOR
California Eastern Laboratories.
NEC's NPN SILICON TRANSISTOR
California Eastern Laboratories.
NEC's NPN SILICON TRANSISTOR
California Eastern Laboratories.
NEC'S NPN SILICON EPITAXIAL TRANSISTOR
California Eastern Laboratories.
NEC'S NPN SILICON EPITAXIAL TRANSISTOR
California Eastern Laboratories.
NEC's NPN SILICON RF TWIN TRANSISTOR
California Eastern Laboratories.
NEC's NPN SILICON RF TWIN TRANSISTOR
NEC => Renesas Technology
NEC's NPN SILICON RF TWIN TRANSISTOR ( Rev : V2 )
NEC => Renesas Technology