TPC6005 データシート - Toshiba
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TPC6005
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Toshiba
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 10 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2001 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2003 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2002 )
Toshiba
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