MICROWAVE POWER GaAs FET

FEATURES
HIGH POWER                                                  
  P1dB=45.0dBm at 14.0GHz to 14.5GHz
HIGH GAIN                                                        
  G1dB=5.5dB at 14.0GHz to 14.5GHz
LOW INTERMODULATION DISTORTION
  IM3(Min.)=-25dBc at Po=38.0dBm Single Carrier Level
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE