FEATURES■ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm■ HIGH POWER P1dB=40.5dBm at 10.7GHz to 11.7GHz■ HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7GHz■ BROAD BAND INTERNALLY MATCHED FET■ HERMETICALLY SEALED PACKAGE