DESCRIPTION
The TCET1600, TCET1600G consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a single (4 pin) package.

FEATURES
• Isolation materials according to UL94 V-O
• Pollution degree 2 (DIN/VDE 0110 /resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection
• Low temperature coefficient of CTR
• Rated impulse voltage (transient overvoltage) VIOTM = 10 kV peak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV peak
• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 890 Vpeak
• Thickness though insulation ≥ 0.75 mm
• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC