DESCRIPTION
The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.

FEATURES
• Endstackable to 2.54 mm (0.1") spacing
• DC isolation test voltage VISO = 5000 VRMS
• Low coupling capacitance of typical 0.3 pF
• Current transfer ratio (CTR) of typical 100 %
• Low temperature coefficient of CTR
• Wide ambient temperature range
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
• Feature phones
• Answering machines
• PBX
• Fax machines