DESCRIPTION
The TCET1600/TCET1600G consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a single (4 pin) package.
The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.

FEATURES
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110 /resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection
• Low temperature coefficient of CTR
• Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV peak
• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak
• Thickness though insulation ≥ 0.75 mm
• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
• Computer peripheral interface
• Microprocessor system interface
• Telecom equipment
• Circuits for safe protective separation against electrical
   shock according to safety class II (reinforced isolation):
      - for appl. class I - IV at mains voltage ≤ 300 V
      - for appl. class I - III at mains voltage ≤ 600 V
   according to DIN EN 60747-5-2 (VDE 0884)/
   DIN EN 60747-5-5 pending.