DESCRIPTION
The third generatio- of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes betwee- gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as request ed by a large variety of single-switch applications.

- TYPICAL RDS(on) = 1.3 Ω
- EXTREMELY HIGH dv/dt CAPABILITY GATE TO-SOURCE ZENER DIODES
- 100% AVALANCHE TESTED
- VERY LOW INTRINSIC CAPACITANCES
- GATE CHARGE MINIMIZED

APPLICATIONS
- SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
- WELDING EQUIPMENT