STW8NC80Z データシートの表示（PDF） - STMicroelectronics

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STW8NC80Z

N-CHANNEL 800V - 1.3 Ω - 6.7A TO-247 Zener-Protected PowerMESH™III MOSFET

STMicroelectronics 

STW8NC80Z

N-CHANNEL 800V - 1.3 Ω - 6.7A TO-247

Zener-Protected PowerMESH™III MOSFET

TYPE

VDSS

RDS(on)

ID

STW8NC80Z

800 V < 1.5 Ω

6.7 A

n TYPICAL RDS(on) = 1.3 Ω

n EXTREMELY HIGH dv/dt CAPABILITY GATE-

TO-SOURCE ZENER DIODES

n 100% AVALANCHE TESTED

n VERY LOW INTRINSIC CAPACITANCES

n GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrating

back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capabil-

ity with higher ruggedness performance as request-

ed by a large variety of single-switch applications.

APPLICATIONS

n SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

n WELDING EQUIPMENT

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM (q) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

IGS

Gate-source Current

VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)

dv/dt (1) Peak Diode Recovery voltage slope

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)ISD ≤6.7A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

December 2001

Value

800

800

±25

6.7

4.2

27

160

1.28

±50

3

3

–65 to 150

150

Unit

V

V

V

A

A

A

W

W/°C

mA

KV

V/ns

°C

°C

1/8

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