DESCRIPTION
This Power MOSFET is the second generation of STMicroelectronics unique ” Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
■ TYPICAL RDS(on) = 0.018 Ω
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGMENT IN NOMADIC EQUIPMENT
■ POWER MANAGEMENT IN PORTABLE/DESKTOPPCs