Description
This device is a complementary N-channel and P-channel Power MOSFET developed using STripFET™ II (P-channel) and STripFET™ V (N-channel) technologies. The resulting transistors show extremely high packing density for low on-resistance and rugged avalanche characteristics.
FEATUREs
• Conduction losses reduced
• Switching losses reduced
• Low threshold drive
• Standard outline for easy automated surface mount assembly
APPLICATIONs
• Switching applications