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STS8C5H30L(2004) データシートの表示(PDF) - STMicroelectronics

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STS8C5H30L Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
STS8C5H30L
N-CHANNEL 30V - 0.018- 8A SO-8
P-CHANNEL 30V - 0.045- 5A SO-8
LOW GATE CHARGE StripFET™ III MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
STS8C5H30L (N-Channel) 30 V < 0.022 8 A
STS8C5H30L (P-Channel) 30 V < 0.055 5 A
s TYPICAL RDS(on) (N-Channel) = 0.018
s TYPICAL RDS(on) (P-Channel) = 0.045
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DRIVE
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique ”Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
Figure 1: Package
SO-8
Figure 2: Internal Schematic Diagram
APPLICATIONS
s DC/DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN CELLULAR
PHONES
s DC MOTOR DRIVE
Table 2: Order Codes
PART NUMBER
STS8C5H30L
MARKING
S8C5H30L
PACKAGE
SO-8
September 2004
PACKAGING
TAPE & REEL
Rev. 2
1/11

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