STP180N10F3 データシート - STMicroelectronics
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STP180N10F3
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12 Pages
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STMicroelectronics
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
■ Ultra low on-resistance
■ 100% avalanche tested
APPLICATION
■ High current switching applications
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