Description
These devices are an N-channel Power MOSFET realized with the latest development of STMicroelectronis unique "single feature size" strip-based process. The resulting transistors show extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

FEATUREs
■ Exceptional dv/dt capability
■ Standard threshold drive
■ 100% avalanche tested

APPLICATIONs
■ Switching application